FDS4501H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

3.9mm

Turn-Off Delay Time :

40 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Series :

PowerTrench®

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

Current Rating :

9.3A

Contact Plating :

Tin

Published :

2001

Continuous Drain Current (ID) :

9.3A

Fall Time (Typ) :

25 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

8

Length :

4.9mm

Mounting Type :

Surface Mount

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

18m Ω @ 9.3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Height :

1.575mm

Current - Continuous Drain (Id) @ 25°C :

9.3A 5.6A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

187mg

Rise Time :

15ns

Input Capacitance (Ciss) (Max) @ Vds :

1958pF @ 10V

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V 20V

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1.6V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

8V

Terminal Position :

Dual

Resistance :

18mOhm

Max Power Dissipation :

1W

Drain to Source Breakdown Voltage :

-20V