FDS4501H
- Mfr.Part #
- FDS4501H
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V/20V 8SOIC
- Stock
- 18,595
- In Stock :
- 18,595
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn-Off Delay Time :
- 40 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 9.3A 5.6A
- Number of Pins :
- 8
- FET Type :
- N and P-Channel
- Length :
- 4.9mm
- FET Feature :
- Logic Level Gate
- Height :
- 1.575mm
- Resistance :
- 18mOhm
- Factory Lead Time :
- 18 Weeks
- Max Power Dissipation :
- 1W
- Width :
- 3.9mm
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 9.3A, 10V
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V 20V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 9.3A
- Number of Terminations :
- 8
- Gate to Source Voltage (Vgs) :
- 8V
- Fall Time (Typ) :
- 25 ns
- Continuous Drain Current (ID) :
- 9.3A
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Surface Mount
- Threshold Voltage :
- 1.6V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Published :
- 2001
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1958pF @ 10V
- Drain to Source Breakdown Voltage :
- -20V
- Weight :
- 187mg
- Number of Elements :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Turn On Delay Time :
- 15 ns
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 15ns
- REACH SVHC :
- No SVHC
- Datasheets
- FDS4501H
FDS4501H Documents

FDS4501H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS4501H Description
Utilizing a cutting-edge PowerTrench technique that has been specifically designed to reduce on-state resistance while maintaining low gate charge for enhanced switching performance, this complementary MOSFET half-bridge device is created.
FDS4501H Features
-
N-Channel Q1
-
9.3A, 30V
-
RDS(on) maximum = 18 m at VGS = 10 V,
-
Maximum RDS(on) = 23 m at 4.5 volts
-
P-Channel Q2
-
-5.6A, -20V
-
RDS(on) maximum = 46 m at VGS = -4.5 V
-
RDS(on) maximum = 63 m at VGS = -2.5 V
FDS4501H Applications
-
This product is all-purpose and appropriate for a wide range of uses.
-
Converters, DC/DC
-
Power Control
-
Charge Switch
-
Battery Security
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