FDR8508P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

3A

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Power - Max :

800mW

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

52m Ω @ 3A, 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V

Pin Count :

8

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

8-LSOP (0.130, 3.30mm Width)

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 15V

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

3A

Drain-source On Resistance-Max :

0.052Ohm

Operating Mode :

ENHANCEMENT MODE

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-PDSO-G8