FDR844P
- Mfr.Part #
- FDR844P
- Manufacturer
- onsemi
- Package / Case
- 8-LSOP (0.130, 3.30mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 10A SUPERSOT8
- Stock
- 4,078
- In Stock :
- 4,078
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 8
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- JESD-30 Code :
- R-PDSO-G8
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 10A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 74nC @ 4.5V
- Power Dissipation-Max :
- 1.8W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.951pF @ 10V
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 20V
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Package / Case :
- 8-LSOP (0.130, 3.30mm Width)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Drain-source On Resistance-Max :
- 0.011Ohm
- Drain Current-Max (Abs) (ID) :
- 10A
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Dual
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FDR844P

P-Channel Tape & Reel (TR) 11m Ω @ 10A, 4.5V ±8V 4.951pF @ 10V 74nC @ 4.5V 20V 8-LSOP (0.130, 3.30mm Width)
FDR844P Overview
The maximum input capacitance of this device is 4.951pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
FDR844P Features
a 20V drain to source voltage (Vdss)
FDR844P Applications
There are a lot of Rochester Electronics, LLC
FDR844P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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