FDR858P

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Mfr.Part #
FDR858P
Manufacturer
onsemi
Package / Case
8-LSOP (0.130, 3.30mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 8A SUPERSOT8
Stock
9,294
In Stock :
9,294

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 5V
FET Type :
P-Channel
Rds On (Max) @ Id, Vgs :
19mOhm @ 8A, 10V
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Published :
1999
Vgs (Max) :
±20V
Package / Case :
8-LSOP (0.130, 3.30mm Width)
Power Dissipation-Max :
1.8W Ta
Supplier Device Package :
SuperSOT™-8
Input Capacitance (Ciss) (Max) @ Vds :
2010pF @ 15V
Current - Continuous Drain (Id) @ 25°C :
8A Ta
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tape and Reel (TR)
Datasheets
FDR858P
Introducing Transistors - FETs, MOSFETs - Single onsemi FDR858P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-LSOP (0.130, 3.30mm Width), FDR858P pinout, FDR858P datasheet PDF, FDR858P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDR858P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDR858P


P-Channel Tape & Reel (TR) 19mOhm @ 8A, 10V ±20V 2010pF @ 15V 30nC @ 5V 30V 8-LSOP (0.130, 3.30mm Width)

FDR858P Description


The SuperSOT-8 family of P-Channel Logic Level MOSFETs was created as an industry-standard SO-8 little foot type product substitute with a low profile and compact footprint.

This P-Channel Logic Level MOSFET is made utilizing the cutting-edge PowerTrench technology from Fairchild Semiconductor, which has been carefully designed to reduce the on-state resistance while maintaining a low gate charge for excellent switching performance. Applications including as load switching, power management, battery charging circuits, and DC/DC conversion are well suited for these devices in notebook computers.



FDR858P Features


  • -8 A, -30 V. RDS(ON)

  • Low gate charge (21nC typical).

  • High performance trench technology for extremely low RDS(ON)

  • SuperSOTTM-8 package: small footprint (40%) less than SO-8); low profile (1mm thick); maximum power comperable to SO-8



FDR858P Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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