FDMD86100

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Max Power Dissipation :

2.2W

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 50V

Weight :

97.95918mg

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Package / Case :

8-PowerWDFN

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual) Common Source

Continuous Drain Current (ID) :

10A

Reach Compliance Code :

not_compliant

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 10A, 10V

Series :

PowerTrench®

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

260