FDMD86100

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Mfr.Part #
FDMD86100
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerWDFN
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR
Stock
1,393
In Stock :
1,393

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Arrays
Peak Reflow Temperature (Cel) :
260
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Continuous Drain Current (ID) :
10A
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 10A, 10V
FET Feature :
Standard
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
100V
Series :
PowerTrench®
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Package / Case :
8-PowerWDFN
Input Capacitance (Ciss) (Max) @ Vds :
2060pF @ 50V
Max Power Dissipation :
2.2W
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tape and Reel (TR)
Weight :
97.95918mg
Factory Lead Time :
12 Weeks
FET Type :
2 N-Channel (Dual) Common Source
Number of Pins :
8
Element Configuration :
Dual
Mount :
Surface Mount
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Datasheets
FDMD86100
Introducing Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMD86100 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, Number of Pins:8, Mounting Type:Surface Mount, FDMD86100 pinout, FDMD86100 datasheet PDF, FDMD86100 amp .Beyond Transistors - FETs, MOSFETs - Arrays Fairchild Semiconductor FDMD86100 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDMD86100


FDMD86100 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDMD86100    Description


  The package integrates two N-channel devices connected internally in a common source configuration and adopts screen door technology. This enables extremely low package parasitism and optimized thermal paths to the bottom common source pads. Very small footprint (5 X 6 Mm) allows for higher power density.

 

FDMD86100    Features

 

Common source configuration to eliminate PCB routing

Large source pad on bottom of package for enhanced thermals

Shielded Gate MOSFET Technology

Max rDS(on) = 10.5 m|? at VGS = 10 V, ID = 10 A

Max rDS(on) = 17.3 m|? at VGS = 6 V, ID = 7.8 A

Ideal for flexible layout in secondary side synchronous rectification

Termination is Lead-free and RoHS Compliant

100% UIL tested


FDMD86100          Applications


This product is general usage and suitable for many different applications.

 






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