FDMD8560L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerWDFN

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

No SVHC

FET Type :

2 N-Channel (Half Bridge)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2.2W

Continuous Drain Current (ID) :

22A

Mount :

Surface Mount

Turn-Off Delay Time :

57 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

11130pF @ 30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

2.2W

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Weight :

94.85095mg

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

22A 93A

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Height :

800μm

Turn On Delay Time :

20 ns

Mounting Type :

Surface Mount

Threshold Voltage :

1.6V

Pbfree Code :

yes

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 22A, 10V

Number of Pins :

8