FDMC8032L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

20m Ω @ 7A, 10V

Width :

3mm

Mounting Type :

Surface Mount

Height :

750μm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

5.5 ns

Series :

PowerTrench®

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

50A

Turn-Off Delay Time :

13 ns

Max Power Dissipation :

12W

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

FET Feature :

Logic Level Gate

JESD-30 Code :

S-PDSO-N4

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Breakdown Voltage :

40V

Weight :

196mg

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

13 mJ

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Factory Lead Time :

11 Weeks

Number of Elements :

2

Length :

3mm

Transistor Application :

SWITCHING

Power - Max :

1.9W

Lead Free :

Lead Free

Number of Channels :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Rise Time :

1.2ns

Continuous Drain Current (ID) :

20A

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-PowerWDFN

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Pins :

8

Published :

2017

Case Connection :

DRAIN

Fall Time (Typ) :

1.3 ns

JESD-609 Code :

e4

Element Configuration :

Dual