FDMC007N30D

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Feedback Cap-Max (Crss) :

30 pF

DS Breakdown Voltage-Min :

30V

Weight :

186mg

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Number of Terminations :

8

Power - Max :

1.9W 2.5W

Factory Lead Time :

23 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 15V 2360pF @ 15V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PDSO-N8

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0116Ohm

Pbfree Code :

yes

JESD-609 Code :

e4

Drain Current-Max (Abs) (ID) :

29A

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

46A

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerWDFN

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 10A, 10V

Case Connection :

DRAIN SOURCE

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ