FDMC8030

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Published :

2007

Max Power Dissipation :

800mW

Height :

800μm

Drain to Source Breakdown Voltage :

40V

Radiation Hardening :

No

JESD-609 Code :

e4

Feedback Cap-Max (Crss) :

30 pF

Threshold Voltage :

1.5V

Turn-Off Delay Time :

19 ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Series :

PowerTrench®

Case Connection :

DRAIN SOURCE

ECCN Code :

EAR99

Length :

3mm

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Power Dissipation :

1.9W

Rds On (Max) @ Id, Vgs :

10m Ω @ 12A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Rise Time :

3ns

Factory Lead Time :

7 Weeks

Gate to Source Voltage (Vgs) :

12V

Additional Feature :

AVALANCHE RATED

Element Configuration :

Dual

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12A

Mount :

Surface Mount

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Channels :

2

Turn On Delay Time :

7 ns

Fall Time (Typ) :

3 ns

Width :

3mm

Input Capacitance (Ciss) (Max) @ Vds :

1975pF @ 20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerWDFN

Pulsed Drain Current-Max (IDM) :

50A

Operating Temperature :

-55°C~150°C TJ

Weight :

196mg

Drain to Source Voltage (Vdss) :

40V

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C