FDMA908PZ
- Mfr.Part #
- FDMA908PZ
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 12A 6MICROFET
- Stock
- 19,375
- In Stock :
- 19,375
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn-Off Delay Time :
- 131 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Turn On Delay Time :
- 11 ns
- Power Dissipation-Max :
- 2.4W Ta
- Threshold Voltage :
- -600mV
- Rise Time :
- 12ns
- Gate to Source Voltage (Vgs) :
- 8V
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Number of Elements :
- 1
- Power Dissipation :
- 2.4W
- Input Capacitance (Ciss) (Max) @ Vds :
- 3957pF @ 6V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- 6-WDFN Exposed Pad
- Mounting Type :
- Surface Mount
- Height :
- 850μm
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 12A, 4.5V
- Fall Time (Typ) :
- 71 ns
- Number of Pins :
- 6
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 4.5V
- Feedback Cap-Max (Crss) :
- 903 pF
- Published :
- 2017
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Vgs (Max) :
- ±8V
- Case Connection :
- DRAIN
- JESD-609 Code :
- e4
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 12V
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Mount :
- Surface Mount
- Width :
- 2.05mm
- Element Configuration :
- Single
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- -12A
- Number of Terminations :
- 6
- Weight :
- 30mg
- Length :
- 2.05mm
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Gold
- Drain to Source Breakdown Voltage :
- -12V
- Datasheets
- FDMA908PZ
FDMA908PZ Documents

P-Channel Tape & Reel (TR) 12.5m Ω @ 12A, 4.5V ±8V 3957pF @ 6V 34nC @ 4.5V 12V 6-WDFN Exposed Pad
FDMA908PZ Description
The FDMA908PZ is a single P-Channel power MOSFET developed for battery charging and load switching in mobile phones and other ultraportable devices. It has a low-on-state resistance MOSFET and ESD protection through a zener diode. According to the FDMA908PZ datasheet, the MicroFET 2X2 package has remarkable thermal performance for its physical size and is well suited to linear mode applications.
FDMA908PZ Features
-
RoHS Compliant
-
Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
-
HBM ESD protection level > 2.8 kV typical (Note 3)
-
Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
-
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
-
Free from halogenated compounds and antimony oxides
-
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
FDMA908PZ Applications
-
Battery charge
-
Load switching in cellular handset
-
Other ultraportable applications
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