FDMA905P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

FET Type :

P-Channel

Terminal Position :

Dual

Threshold Voltage :

-700mV

Power Dissipation :

900mW

Factory Lead Time :

16 Weeks

JESD-609 Code :

e4

Case Connection :

DRAIN

Continuous Drain Current (ID) :

10A

Package / Case :

6-VDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Rise Time :

11ns

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

11 ns

Power Dissipation-Max :

2.4W Ta

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 6V

Input Capacitance (Ciss) (Max) @ Vds :

3405pF @ 6V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Number of Pins :

6

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs (Max) :

±8V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

16m Ω @ 10A, 4.5V

Height :

725μm

REACH SVHC :

No SVHC

Length :

2mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

12V

Drain Current-Max (Abs) (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Series :

PowerTrench®

Turn-Off Delay Time :

120 ns

Width :

2mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

59 ns

Number of Terminations :

6

Number of Elements :

1

ECCN Code :

EAR99

Weight :

30mg

Vgs(th) (Max) @ Id :

1V @ 250μA