FDMA86265P
- Mfr.Part #
- FDMA86265P
- Manufacturer
- onsemi
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 1A 6MICROFET
- Stock
- 550,127
- In Stock :
- 550,127
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Series :
- PowerTrench®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 1A Ta
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- 6-WDFN Exposed Pad
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Terminal Form :
- NO LEAD
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 6
- Rise Time :
- 2.2ns
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 10V
- Turn On Delay Time :
- 5.8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1A, 10V
- Turn-Off Delay Time :
- 8 ns
- Terminal Finish :
- Nickel/Gold/Palladium/Silver (Ni/Au/Pd/Ag)
- Number of Elements :
- 1
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 150V
- Drain Current-Max (Abs) (ID) :
- 1A
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Feedback Cap-Max (Crss) :
- 5 pF
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 75V
- Vgs (Max) :
- ±25V
- Power Dissipation-Max :
- 2.4W Ta
- Number of Channels :
- 1
- Mount :
- Surface Mount
- Weight :
- 30mg
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 6.4 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDMA86265P

P-Channel Tape & Reel (TR) 1.2 Ω @ 1A, 10V ±25V 210pF @ 75V 4nC @ 10V 150V 6-WDFN Exposed Pad
FDMA86265P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been optimized for the on-state resistance and yet maintains superior switching performance.
FDMA86265P Features
Max rDS(on) = 1.2 |? at VGS = -10 V, ID = -1 A
Max rDS(on) = 1.4 |? at VGS = -6 V, ID = -0.9 A
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
Very low RDS-on mid voltage P-channel silicon technology optimized for low Qg
This product is optimized for fast switching applications as well as load switch applications
100% UIL tested
RoHS Compliant
FDMA86265P Applications
Active Clamp Switch
Load Switch
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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