FDMA7632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-609 Code :

e4

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Nominal Vgs :

2.1 V

Rds On (Max) @ Id, Vgs :

19m Ω @ 9A, 10V

Number of Channels :

1

Rise Time :

2ns

Number of Elements :

1

Power Dissipation-Max :

2.4W Ta

Turn-Off Delay Time :

14 ns

Package / Case :

6-VDFN Exposed Pad

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation :

900mW

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

40 pF

RoHS Status :

ROHS3 Compliant

Width :

2mm

Height :

850μm

Length :

2mm

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

30V

Case Connection :

DRAIN

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Series :

PowerTrench®

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

2 ns

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

6 ns

Number of Terminations :

6

Weight :

30mg

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V