FDMA530PZ
- Mfr.Part #
- FDMA530PZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 6,000
- In Stock :
- 6,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 2.4W Ta
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 21ns
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Dual Supply Voltage :
- -30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 6
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Ta
- Pulsed Drain Current-Max (IDM) :
- 24A
- Turn On Delay Time :
- 6 ns
- Fall Time (Typ) :
- 31 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Weight :
- 30mg
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 1070pF @ 15V
- Length :
- 2mm
- Vgs (Max) :
- ±25V
- Published :
- 2006
- Continuous Drain Current (ID) :
- -6.8A
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.8A, 10V
- Termination :
- SMD/SMT
- Series :
- PowerTrench®
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Width :
- 2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Nominal Vgs :
- 25 V
- Current Rating :
- -6.8A
- Drain to Source Breakdown Voltage :
- -30V
- Turn-Off Delay Time :
- 43 ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -30V
- Package / Case :
- 6-VDFN Exposed Pad
- Threshold Voltage :
- -2.1V
- JESD-609 Code :
- e4
- Height :
- 750μm
- Resistance :
- 35mOhm
- Power Dissipation :
- 2.4W
- Datasheets
- FDMA530PZ

P-Channel Tape & Reel (TR) 35m Ω @ 6.8A, 10V ±25V 1070pF @ 15V 24nC @ 10V 30V 6-VDFN Exposed Pad
FDMA530PZ Description
The ONSEMI FDMA530PZ is a single P-channel MOSFET manufactured using the PowerTrench? technology. It is intended for battery charging or load switching in cellular phones and other ultra-portable applications. It has a MOSFET with low ON-state resistance. The MicroFET 2X2 package has excellent thermal performance for its size and is ideally suited to linear mode applications.
FDMA530PZ Features
-
Max. RDS(on) = 35m|at VGS = -10V, ID = -6.8A
-
Max. RDS(on) = 65m|at VGS = -4.5V, ID = -5.0A
-
Low profile -0.8mm maximum -in the new package MicroFET 2X2 mm
-
HBM ESD protection level > 3k V typical (Note 3)
-
Free from halogenated compounds and antimony oxides
-
RoHS compliant
FDMA530PZ Applications
-
General usage and suitable for many different applications
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