FDMA410NZ
- Mfr.Part #
- FDMA410NZ
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 9.5A 6MICROFET
- Stock
- 84,255
- In Stock :
- 84,255
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 3.7 ns
- Continuous Drain Current (ID) :
- 9.5A
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 7.5 ns
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Weight :
- 30mg
- Turn-Off Delay Time :
- 27 ns
- Pbfree Code :
- yes
- Height :
- 750μm
- Length :
- 2mm
- Power Dissipation :
- 2.4W
- Drain to Source Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 2.4W Ta
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 8V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Package / Case :
- 6-VDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta
- JESD-609 Code :
- e4
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 9.5A, 4.5V
- Nominal Vgs :
- 700 mV
- Resistance :
- 23mOhm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs (Max) :
- ±8V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 1080pF @ 10V
- ECCN Code :
- EAR99
- Rise Time :
- 3.9ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMA410NZ

N-Channel Tape & Reel (TR) 23m Ω @ 9.5A, 4.5V ±8V 1080pF @ 10V 14nC @ 4.5V 6-VDFN Exposed Pad
Description
The FDMA410NZ is a Single N-Channel 1.5V Specified PowerTrench? MOSFET. This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on a special MicroFET leadframe. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly all MOSFETs fall under the umbrella of a metal-insulator-semiconductor field-effect transistor, or MISFET. IGFET, or insulated-gate field-effect transistor, is another equivalent term.
Features
-
HBM ESD protection level > 2.5 kV
-
Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
-
Free from halogenated compounds and antimony oxides
-
RoHS Compliant
-
Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A
-
Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A
-
Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A
-
Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A
Applications
-
Li-lon Battery Pack
-
Baseband Switch
-
Load Switch
-
DC-DC Conversion
-
Automotive Electronics
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