FDMA291P
- Mfr.Part #
- FDMA291P
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.6A 6MICROFET
- Stock
- 51,749
- In Stock :
- 51,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 2mm
- Transistor Element Material :
- SILICON
- Dual Supply Voltage :
- -20V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.4W Ta
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- FET Type :
- P-Channel
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 42 ns
- Threshold Voltage :
- -700mV
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Breakdown Voltage :
- -20V
- Qualification Status :
- Not Qualified
- Current Rating :
- -6.6A
- Contact Plating :
- Gold
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000pF @ 10V
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 42m Ω @ 6.6A, 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 750μm
- Package / Case :
- 6-VDFN Exposed Pad
- Turn On Delay Time :
- 13 ns
- Series :
- PowerTrench®
- Vgs (Max) :
- ±8V
- Drain to Source Voltage (Vdss) :
- 20V
- Width :
- 2mm
- Power Dissipation :
- 2.4W
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- -20V
- Weight :
- 30mg
- Resistance :
- 42mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Nominal Vgs :
- -700 mV
- Rise Time :
- 9ns
- JESD-609 Code :
- e4
- Continuous Drain Current (ID) :
- -6.6A
- Fall Time (Typ) :
- 25 ns
- Factory Lead Time :
- 16 Weeks
- Published :
- 2009
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 6.6A Ta
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- NO LEAD
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Datasheets
- FDMA291P
FDMA291P Documents

P-Channel Tape & Reel (TR) 42m Ω @ 6.6A, 4.5V ±8V 1000pF @ 10V 14nC @ 4.5V 20V 6-VDFN Exposed Pad
FDMA291P Description
The FDMA291P is a single P-channel MOSFET with a 1.8V specification made with the PowerTrench? technology. It's made for charging batteries and switching loads in cellular phones and other ultraportable devices. It includes a low-ON-state resistance MOSFET. The MicroFET 2x2 package has excellent thermal performance for its size, making it ideal for linear mode applications.
FDMA291P Features
-
-6.6 A, -20 V
-
RDS(ON) = 42 mΩ @ VGS = -4.5 V
-
RDS(ON) = 58 mΩ @ VGS = -2.5 V
-
RDS(ON) = 98 mΩ @ VGS = -1.8 V
-
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
-
Free from halogenated compounds and antimony oxides
-
RoHS Compliant
FDMA291P Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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