FDG6318P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Width :

1.25mm

Terminal Form :

Gull wing

Lead Free :

Lead Free

Rise Time :

12ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

500mA

Current Rating :

-500mA

Voltage - Rated DC :

-20V

Number of Pins :

6

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.5A

Contact Plating :

Tin

Published :

2003

Length :

2mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Weight :

28mg

Packaging :

Tape and Reel (TR)

Height :

1mm

Drain to Source Voltage (Vdss) :

20V

Turn-Off Delay Time :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

780m Ω @ 500mA, 4.5V

Number of Terminations :

6

Resistance :

780mOhm

Max Power Dissipation :

300mW

Mount :

Surface Mount

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain to Source Breakdown Voltage :

-20V

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Element Configuration :

Dual

Power Dissipation :

300mW

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns