FDG6318P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6 ns

Drain to Source Voltage (Vdss) :

20V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Turn-Off Delay Time :

6 ns

Length :

2mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Published :

2003

Weight :

28mg

Rds On (Max) @ Id, Vgs :

780m Ω @ 500mA, 4.5V

Current Rating :

-500mA

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

Mount :

Surface Mount

Number of Pins :

6

ECCN Code :

EAR99

Pbfree Code :

yes

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 4.5V

Height :

1mm

Element Configuration :

Dual

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Voltage - Rated DC :

-20V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.5A

Resistance :

780mOhm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

300mW

Gate to Source Voltage (Vgs) :

12V

Rise Time :

12ns

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

500mA

Input Capacitance (Ciss) (Max) @ Vds :

83pF @ 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Max Power Dissipation :

300mW

Number of Terminations :

6

Width :

1.25mm

Terminal Form :

Gull wing

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)