FDD6N50TM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

89W

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Element Configuration :

Single

Fall Time (Typ) :

35 ns

Vgs (Max) :

±30V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Number of Pins :

3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Threshold Voltage :

5V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

FDD6N50

Series :

UniFET™

Lead Free :

Lead Free

FET Type :

N-Channel

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

89W Tc

Turn On Delay Time :

6 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

900mOhm

Number of Elements :

1

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

6A

REACH SVHC :

No SVHC

Rise Time :

55ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)