FDD6N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Transistor Element Material :

SILICON

Element Configuration :

Single

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

500V

Series :

UniFET™

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Number of Elements :

1

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Width :

6.22mm

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Number of Pins :

3

Power Dissipation :

89W

Rise Time :

55ns

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Length :

6.73mm

Published :

2016

Turn On Delay Time :

6 ns

Weight :

260.37mg

Fall Time (Typ) :

35 ns

Power Dissipation-Max :

89W Tc

Radiation Hardening :

No

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

24A

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Turn-Off Delay Time :

25 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Base Part Number :

FDD6N50

Factory Lead Time :

4 Weeks

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Continuous Drain Current (ID) :

6A

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

270 mJ

Mounting Type :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6A

Resistance :

900mOhm

FET Type :

N-Channel