FDD6N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

260.37mg

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

6 ns

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Surface Mount

Power Dissipation-Max :

89W Tc

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Avalanche Energy Rating (Eas) :

270 mJ

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Series :

UniFET™

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.39mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Element Configuration :

Single

Published :

2016

Base Part Number :

FDD6N50

Rise Time :

55ns

Continuous Drain Current (ID) :

6A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

900mOhm

Turn-Off Delay Time :

25 ns

Width :

6.22mm

FET Type :

N-Channel

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

24A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Length :

6.73mm

Vgs (Max) :

±30V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Power Dissipation :

89W

Fall Time (Typ) :

35 ns

Drain to Source Breakdown Voltage :

500V

Drain Current-Max (Abs) (ID) :

6A

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V