FDD6N50TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Series :

UniFET™

Width :

6.22mm

Radiation Hardening :

No

Lead Free :

Lead Free

Mount :

Surface Mount

Length :

6.73mm

Pulsed Drain Current-Max (IDM) :

24A

Number of Terminations :

2

Turn On Delay Time :

6 ns

Gate to Source Voltage (Vgs) :

30V

Height :

2.39mm

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

ECCN Code :

EAR99

Vgs (Max) :

±30V

Base Part Number :

FDD6N50

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Elements :

1

Resistance :

900mOhm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

6A

Rise Time :

55ns

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Turn-Off Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

500V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

260.37mg

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

270 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Power Dissipation-Max :

89W Tc

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

89W

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

35 ns