FDD6N50TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

25 ns

Current Rating :

24A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

16.6nC @ 10V

Radiation Hardening :

No

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Number of Pins :

3

Series :

UniFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6A

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

FDD6N50

Power Dissipation-Max :

89W Tc

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6 ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Voltage - Rated DC :

500V

Rise Time :

55ns

Rds On (Max) @ Id, Vgs :

900m Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Published :

2004

Power Dissipation :

89W

Current - Continuous Drain (Id) @ 25°C :

6A Tc