FDD6N50FTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Published :

2013

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

22A

Base Part Number :

FDD6N50

Series :

UniFET™

Feedback Cap-Max (Crss) :

9.5 pF

Turn On Delay Time :

17 ns

Turn-Off Delay Time :

33.4 ns

Number of Terminations :

2

Mount :

Surface Mount

Width :

6.22mm

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Terminal Form :

Gull wing

Vgs (Max) :

±30V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Pbfree Code :

yes

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.39mm

Rise Time :

28.3ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Continuous Drain Current (ID) :

5.5A

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.73mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

500V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Resistance :

1.15Ohm

Fall Time (Typ) :

20.5 ns

Factory Lead Time :

4 Weeks

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

19.8nC @ 10V

ECCN Code :

EAR99

Power Dissipation :

89W

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

270 mJ

Weight :

260.37mg

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Power Dissipation-Max :

89W Tc

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 2.75A, 10V