FDD6N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

260.37mg

Turn-Off Delay Time :

7 ns

Rise Time :

25ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn On Delay Time :

10 ns

Power Dissipation :

50W

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

45 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

250V

Number of Elements :

1

Radiation Hardening :

No

Case Connection :

DRAIN

Width :

6.22mm

Power Dissipation-Max :

50W Tc

JEDEC-95 Code :

TO-252AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 2.2A, 10V

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Height :

2.39mm

Additional Feature :

FAST SWITCHING

Lead Free :

Lead Free

Length :

6.73mm

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Series :

UniFET™

Mount :

Surface Mount

Published :

2007

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4.4A

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel