FDD6N25TF
- Mfr.Part #
- FDD6N25TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 6,668
- In Stock :
- 6,668
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- UniFET™
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DS Breakdown Voltage-Min :
- 250V
- Additional Feature :
- FAST SWITCHING
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 18A
- Power Dissipation-Max :
- 50W Tc
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.2A, 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 250V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 4.4A
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Packaging :
- Tape and Reel (TR)
- JEDEC-95 Code :
- TO-252AA
- Datasheets
- FDD6N25TF

N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N25TF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 4.4A.Peak drain current is 18A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD6N25TF Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 18A.
a 250V drain to source voltage (Vdss)
FDD6N25TF Applications
There are a lot of Rochester Electronics, LLC
FDD6N25TF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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