FDD6N25TF
- Mfr.Part #
- FDD6N25TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 25,936
- In Stock :
- 25,936
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-252AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.2A, 10V
- Drain to Source Voltage (Vdss) :
- 250V
- Power Dissipation-Max :
- 50W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 250V
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 18A
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Drain Current-Max (Abs) (ID) :
- 4.4A
- Additional Feature :
- FAST SWITCHING
- Series :
- UniFET™
- Datasheets
- FDD6N25TF

N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N25TF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 4.4A.Peak drain current is 18A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD6N25TF Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 18A.
a 250V drain to source voltage (Vdss)
FDD6N25TF Applications
There are a lot of Rochester Electronics, LLC
FDD6N25TF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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