FDD6N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Rise Time :

5.6ns

Vgs (Max) :

±30V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Resistance :

800mOhm

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

12.8 ns

Number of Elements :

1

Weight :

260.37mg

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Turn-Off Delay Time :

15 ns

Avalanche Energy Rating (Eas) :

60 mJ

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Mount :

Surface Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Continuous Drain Current (ID) :

4.5A

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

40W

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Turn On Delay Time :

8.3 ns

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.3A, 10V

Series :

UniFET™

Number of Pins :

3

Power Dissipation-Max :

40W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

JESD-609 Code :

e3