FDD6N20TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

40W Tc

Number of Elements :

1

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Drain to Source Voltage (Vdss) :

200V

Drain-source On Resistance-Max :

0.8Ohm

Avalanche Energy Rating (Eas) :

60 mJ

Drain Current-Max (Abs) (ID) :

4.5A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.3A, 10V

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

UniFET™

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Pbfree Code :

yes

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

18A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA