FDD6796A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain to Source Breakdown Voltage :

25V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1780pF @ 13V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0057Ohm

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

20A Ta 40A Tc

Turn-Off Delay Time :

19 ns

Power Dissipation-Max :

3.7W Ta 42W Tc

Continuous Drain Current (ID) :

20A

Avalanche Energy Rating (Eas) :

40 mJ

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 20A, 10V

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

4 ns

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Power Dissipation :

3.7W

Number of Pins :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rise Time :

7ns

Drain Current-Max (Abs) (ID) :

67A

Turn On Delay Time :

8 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V