FDD6796
- Mfr.Part #
- FDD6796
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 20A/40A DPAK
- Stock
- 21,781
- In Stock :
- 21,781
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Series :
- PowerTrench®
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.315pF @ 13V
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 20A, 10V
- Drain Current-Max (Abs) (ID) :
- 20A
- Pulsed Drain Current-Max (IDM) :
- 100A
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Drain to Source Voltage (Vdss) :
- 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 25V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 39 mJ
- Power Dissipation-Max :
- 3.7W Ta 42W Tc
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDD6796

N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 10V ±20V 2.315pF @ 13V 41nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6796 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 39 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.315pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD6796 Features
the avalanche energy rating (Eas) is 39 mJ
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)
FDD6796 Applications
There are a lot of Rochester Electronics, LLC
FDD6796 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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