FDD6796

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Mfr.Part #
FDD6796
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 20A/40A DPAK
Stock
21,781
In Stock :
21,781

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.0057Ohm
Case Connection :
DRAIN
Terminal Position :
Single
Series :
PowerTrench®
Input Capacitance (Ciss) (Max) @ Vds :
2.315pF @ 13V
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 20A, 10V
Drain Current-Max (Abs) (ID) :
20A
Pulsed Drain Current-Max (IDM) :
100A
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
COMMERCIAL
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
20A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Drain to Source Voltage (Vdss) :
25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
25V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Surface Mount :
yes
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Avalanche Energy Rating (Eas) :
39 mJ
Power Dissipation-Max :
3.7W Ta 42W Tc
Number of Elements :
1
Reach Compliance Code :
Unknown
Pin Count :
3
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
3V @ 250µA
Datasheets
FDD6796
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6796 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD6796 pinout, FDD6796 datasheet PDF, FDD6796 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6796 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6796


N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 10V ±20V 2.315pF @ 13V 41nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6796 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 39 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2.315pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 20A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDD6796 Features


the avalanche energy rating (Eas) is 39 mJ
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)


FDD6796 Applications


There are a lot of Rochester Electronics, LLC
FDD6796 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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