FDD6782A

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Mfr.Part #
FDD6782A
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 20A DPAK
Stock
35,131
In Stock :
35,131

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pin Count :
3
Reach Compliance Code :
Unknown
Terminal Position :
Single
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
100A
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0105Ohm
Qualification Status :
COMMERCIAL
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
20A Ta
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Number of Elements :
1
Vgs(th) (Max) @ Id :
3V @ 250µA
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
12 mJ
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
10.5m Ω @ 14.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1.065pF @ 13V
DS Breakdown Voltage-Min :
25V
Drain to Source Voltage (Vdss) :
25V
Surface Mount :
yes
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
3.7W Ta 31W Tc
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
20A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDD6782A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6782A from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, FDD6782A pinout, FDD6782A datasheet PDF, FDD6782A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6782A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6782A


N-Channel Tape & Reel (TR) 10.5m Ω @ 14.9A, 10V ±20V 1.065pF @ 13V 27nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6782A Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 12 mJ.A device's maximum input capacitance is 1.065pF @ 13V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 20A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

FDD6782A Features


the avalanche energy rating (Eas) is 12 mJ
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)


FDD6782A Applications


There are a lot of Rochester Electronics, LLC
FDD6782A applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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