FDD6780

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Mfr.Part #
FDD6780
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 16.5A/30A DPAK
Stock
872
In Stock :
872

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16.5A Ta 30A Tc
Drain to Source Voltage (Vdss) :
25V
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
1.59pF @ 13V
Drain Current-Max (Abs) (ID) :
16.5A
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
25V
Surface Mount :
yes
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
2
Terminal Position :
Single
Power Dissipation-Max :
3.7W Ta 32.6W Tc
Drain-source On Resistance-Max :
0.0085Ohm
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
20 mJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
JESD-30 Code :
R-PSSO-G2
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
70A
Vgs(th) (Max) @ Id :
3V @ 250µA
Packaging :
Tape and Reel (TR)
Case Connection :
DRAIN
Series :
PowerTrench®
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 16.5A, 10V
Datasheets
FDD6780
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6780 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, FDD6780 pinout, FDD6780 datasheet PDF, FDD6780 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6780 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6780


N-Channel Tape & Reel (TR) 8.5m Ω @ 16.5A, 10V ±20V 1.59pF @ 13V 29nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6780 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.59pF @ 13V maximal input capacitance.A device can conduct a maximum continuous current of [16.5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 70A.The DS breakdown voltage should be maintained above 25V to maintain normal operation.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

FDD6780 Features


the avalanche energy rating (Eas) is 20 mJ
based on its rated peak drain current 70A.
a 25V drain to source voltage (Vdss)


FDD6780 Applications


There are a lot of Rochester Electronics, LLC
FDD6780 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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