FDD6778A

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Mfr.Part #
FDD6778A
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 12A/10A DPAK
Stock
15,586
In Stock :
15,586

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Series :
PowerTrench®
Terminal Position :
Single
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
30
Current - Continuous Drain (Id) @ 25°C :
12A Ta 10A Tc
Peak Reflow Temperature (Cel) :
260
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Application :
SWITCHING
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
14m Ω @ 10A, 10V
Surface Mount :
yes
Drain Current-Max (Abs) (ID) :
12A
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
12 mJ
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Terminal Finish :
MATTE TIN
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.014Ohm
FET Type :
N-Channel
DS Breakdown Voltage-Min :
25V
Pin Count :
3
Drain to Source Voltage (Vdss) :
25V
Number of Terminations :
2
Qualification Status :
COMMERCIAL
Case Connection :
DRAIN
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
50A
Power Dissipation-Max :
3.7W Ta 24W Tc
Input Capacitance (Ciss) (Max) @ Vds :
870pF @ 13V
Vgs(th) (Max) @ Id :
3V @ 250µA
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
FDD6778A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6778A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, FDD6778A pinout, FDD6778A datasheet PDF, FDD6778A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6778A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6778A


N-Channel Tape & Reel (TR) 14m Ω @ 10A, 10V ±20V 870pF @ 13V 17nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6778A Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 12 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 870pF @ 13V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

FDD6778A Features


the avalanche energy rating (Eas) is 12 mJ
based on its rated peak drain current 50A.
a 25V drain to source voltage (Vdss)


FDD6778A Applications


There are a lot of Rochester Electronics, LLC
FDD6778A applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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