FDD6778A
- Mfr.Part #
- FDD6778A
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 12A/10A DPAK
- Stock
- 15,586
- In Stock :
- 15,586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 10A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 10A, 10V
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 12A
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 12 mJ
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Terminal Finish :
- MATTE TIN
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.014Ohm
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 25V
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 25V
- Number of Terminations :
- 2
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 50A
- Power Dissipation-Max :
- 3.7W Ta 24W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 13V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- FDD6778A

N-Channel Tape & Reel (TR) 14m Ω @ 10A, 10V ±20V 870pF @ 13V 17nC @ 10V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6778A Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 12 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 870pF @ 13V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDD6778A Features
the avalanche energy rating (Eas) is 12 mJ
based on its rated peak drain current 50A.
a 25V drain to source voltage (Vdss)
FDD6778A Applications
There are a lot of Rochester Electronics, LLC
FDD6778A applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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