FDD6770A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

25V

Rise Time :

7ns

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Width :

6.22mm

Radiation Hardening :

No

Element Configuration :

Single

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.73mm

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Number of Elements :

1

Number of Terminations :

2

Drain-source On Resistance-Max :

0.004ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

5 ns

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2405pF @ 13V

Power Dissipation :

3.7W

Current - Continuous Drain (Id) @ 25°C :

24A Ta 50A Tc

Continuous Drain Current (ID) :

27A

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Turn-Off Delay Time :

24 ns

Turn On Delay Time :

9 ns

Power Dissipation-Max :

3.7W Ta 65W Tc

Number of Pins :

3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Height :

2.39mm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

24A

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4m Ω @ 24A, 10V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

200A

Avalanche Energy Rating (Eas) :

50 mJ