FDD6760A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

25V

Number of Terminations :

2

Case Connection :

DRAIN

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3170pF @ 13V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

27A Ta 50A Tc

Number of Pins :

3

Power Dissipation-Max :

3.7W Ta 65W Tc

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Resistance :

6mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

9ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation :

3.7W

Turn-Off Delay Time :

28 ns

Mount :

Surface Mount

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 27A, 10V

Weight :

260.37mg

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

27A

Fall Time (Typ) :

6 ns

JESD-609 Code :

e3

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

200A

Avalanche Energy Rating (Eas) :

72 mJ

Contact Plating :

Tin