FDD6690A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

N-Channel

Nominal Vgs :

1.9 V

REACH SVHC :

No SVHC

Pbfree Code :

yes

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Power Dissipation-Max :

3.3W Ta 56W Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Fall Time (Typ) :

12 ns

JESD-30 Code :

R-PSSO-G2

Rise Time :

7ns

Gate to Source Voltage (Vgs) :

20V

Weight :

260.37mg

Terminal Form :

Gull wing

Dual Supply Voltage :

30V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Threshold Voltage :

1.9V

Number of Terminations :

2

Mounting Type :

Surface Mount

Resistance :

12mOhm

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

3.3W

Voltage - Rated DC :

30V

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Elements :

1

Number of Pins :

3

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12A Ta 46A Tc

Published :

2017

Factory Lead Time :

10 Weeks

Series :

PowerTrench®

Continuous Drain Current (ID) :

46A

Current Rating :

46A

Turn-Off Delay Time :

29 ns

Rds On (Max) @ Id, Vgs :

12m Ω @ 12A, 10V

Drain to Source Breakdown Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 18 hours ago)

Width :

6.22mm

JESD-609 Code :

e3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

10 ns

Height :

2.39mm