FDD6688
- Mfr.Part #
- FDD6688
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 84A DPAK
- Stock
- 36,233
- In Stock :
- 36,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Fall Time (Typ) :
- 36 ns
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 10 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 84A Ta
- Series :
- PowerTrench®
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current Rating :
- 84A
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3845pF @ 15V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 260.37mg
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 13ns
- Drain-source On Resistance-Max :
- 0.005ohm
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 84A
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 83W
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 18A, 10V
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 62 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation-Max :
- 83W Ta
- Transistor Element Material :
- SILICON
- Datasheets
- FDD6688

N-Channel Tape & Reel (TR) 5m Ω @ 18A, 10V ±20V 3845pF @ 15V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6688 Description
FDD6688 belongs to the family of N-channel PowerTrench? MOSFETs manufactured by ON Semiconductor that is designed based on advanced and high-performance trench technology. It is used by electronic designers to improve the overall efficiency of DC/DC converters through either synchronous or conventional switching PWM controllers. Due to its high quality and reliable performance, FDD6688 is widely used for motor drives and uninterruptible power supplies, synchronous rectification, and more.
FDD6688 Features
-
Advanced PowerTrench? process
-
Low on-state resistance
-
Low gate charge
-
Superior switching performance
-
Available in the D-PAK package
FDD6688 Applications
-
Synchronous rectification
-
Motor drives
-
Uninterruptible power supplies
-
Battery protection circuit
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