FDD6685
- Mfr.Part #
- FDD6685
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 4,787
- In Stock :
- 4,787
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Current Rating :
- -40A
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1715pF @ 15V
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- -40A
- Drain to Source Breakdown Voltage :
- -30V
- Fall Time (Typ) :
- 21 ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 260.37mg
- FET Type :
- P-Channel
- Number of Terminations :
- 2
- Voltage - Rated DC :
- -30V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 40A Tc
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Tin
- Length :
- 6.73mm
- Resistance :
- 20mOhm
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 43 ns
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 11A, 10V
- Turn On Delay Time :
- 17 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- ECCN Code :
- EAR99
- Threshold Voltage :
- -1.8V
- Height :
- 2.39mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Power Dissipation :
- 52W
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 52W Ta
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Factory Lead Time :
- 10 Weeks
- Width :
- 6.22mm
- Nominal Vgs :
- 1.8 V
- Rise Time :
- 11ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2004
- Datasheets
- FDD6685
FDD6685 Documents

P-Channel Tape & Reel (TR) 20m Ω @ 11A, 10V ±25V 1715pF @ 15V 24nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6685 Description
The FDD6685 is a 30v P-channel MOSFET. The onsemi FDD6685 is a rugged gate version of the advanced PowerTrench? process, with a fast switching speed and high-performance trench technology for extremely low RDS(ON). It is designed for power management applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD6685 is in the DPAK-3 package with 52W power dissipation.
FDD6685 Features
-
-40A, -30V
-
RDS(ON) = 20 mΩ @ VGS = -10V
-
RDS(ON) = 30 mΩ @ VGS = -4.5V
-
Fast switching speed
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
FDD6685 Applications
-
Induction furnaces
-
Arc furnaces and arc welders
-
Steel rolling mills
-
Large motors with periodic loading
-
Thyristor drives
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