FDD6682
- Mfr.Part #
- FDD6682
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 15,834
- In Stock :
- 15,834
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 100A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 17A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Drain-source On Resistance-Max :
- 0.0062Ohm
- JESD-30 Code :
- R-PSSO-G2
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 71W Ta
- Drain Current-Max (Abs) (ID) :
- 75A
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDD6682

N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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