FDD6682
- Mfr.Part #
- FDD6682
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 15,834
- In Stock :
- 15,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 30V
- Series :
- PowerTrench®
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 100A
- Drain to Source Voltage (Vdss) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 75A
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 71W Ta
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 17A, 10V
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Terminal Position :
- Single
- Datasheets
- FDD6682

N-Channel Tape & Reel (TR) 6.2m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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