FDD6680AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Threshold Voltage :

1.4V

Mounting Type :

Surface Mount

Dual Supply Voltage :

30V

Turn On Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

55A Ta

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Length :

6.73mm

Operating Mode :

ENHANCEMENT MODE

Current Rating :

55A

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 1mA

Vgs (Max) :

±20V

Pbfree Code :

yes

Number of Terminations :

2

Nominal Vgs :

1.4 V

ECCN Code :

EAR99

Series :

PowerTrench®, SyncFET™

JESD-30 Code :

R-PSSO-G2

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

55A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Pins :

3

Published :

2004

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Elements :

1

Voltage - Rated DC :

30V

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Weight :

260.37mg

Mount :

Surface Mount

Turn-Off Delay Time :

28 ns

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Rise Time :

6ns

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 12.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

205 mJ

Drain to Source Breakdown Voltage :

30V

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Base Part Number :

FDD6680

Power Dissipation :

60mW

Power Dissipation-Max :

60W Ta