FDD6680A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 12.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

55A Ta

Element Configuration :

Single

Power Dissipation :

60mW

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Published :

2004

Mounting Type :

Surface Mount

Rise Time :

6ns

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Power Dissipation-Max :

60W Ta

Dual Supply Voltage :

30V

Base Part Number :

FDD6680

Length :

6.73mm

Weight :

260.37mg

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

55A

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Width :

6.22mm

Turn-Off Delay Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

55A

Number of Terminations :

2

Case Connection :

DRAIN

Height :

2.39mm

Vgs(th) (Max) @ Id :

3V @ 1mA

Termination :

SMD/SMT

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Nominal Vgs :

1.4 V

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

205 mJ

Threshold Voltage :

1.4V

Series :

PowerTrench®, SyncFET™

FET Type :

N-Channel