FDD6676AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

90A Ta

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 16A, 10V

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2.5pF @ 15V

Drain-source On Resistance-Max :

0.0057Ohm

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 1mA

Drain Current-Max (Abs) (ID) :

90A

Pin Count :

3

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

70W Ta

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

250 mJ

Pulsed Drain Current-Max (IDM) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V