FDD6676
- Mfr.Part #
- FDD6676
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 8,182
- In Stock :
- 8,182
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 100A
- FET Type :
- N-Channel
- Reach Compliance Code :
- Unknown
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 90A Ta
- Terminal Finish :
- MATTE TIN
- DS Breakdown Voltage-Min :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 16A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 70W Ta
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 90A
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.5pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FDD6676
FDD6676 Documents

N-Channel Tape & Reel (TR) 5.7m Ω @ 16A, 10V ±20V 2.5pF @ 15V 64nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6676AS Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 250 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.5pF @ 15V.90A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 100A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
FDD6676AS Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6676AS Applications
There are a lot of Rochester Electronics, LLC
FDD6676AS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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