FDD6670AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

100A

Terminal Form :

Gull wing

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

76A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1.58pF @ 15V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Single

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 1mA

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

76A Ta

Number of Elements :

1

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Series :

PowerTrench®

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

8m Ω @ 13.8A, 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

70W Ta

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.008Ohm