FDD6670AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 5V

Avalanche Energy Rating (Eas) :

370 mJ

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.005ohm

Drain Current-Max (Abs) (ID) :

84A

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3.845pF @ 15V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

100A

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5m Ω @ 18A, 10V

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Series :

PowerTrench®

Power Dissipation-Max :

83W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

84A Ta

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Surface Mount :

yes