FDD6670AL
- Mfr.Part #
- FDD6670AL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 84A DPAK
- Stock
- 3,866
- In Stock :
- 3,866
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 84A
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 30V
- Terminal Finish :
- MATTE TIN
- Pulsed Drain Current-Max (IDM) :
- 100A
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 18A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 370 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 84A Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.845pF @ 15V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 83W Ta
- Surface Mount :
- yes
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Drain-source On Resistance-Max :
- 0.005ohm
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Datasheets
- FDD6670AL

N-Channel Tape & Reel (TR) 5m Ω @ 18A, 10V ±20V 3.845pF @ 15V 56nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6670AL Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 370 mJ.A device's maximal input capacitance is 3.845pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 84A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
FDD6670AL Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6670AL Applications
There are a lot of Rochester Electronics, LLC
FDD6670AL applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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