FDD6637

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

RoHS Status :

ROHS3 Compliant

Rise Time :

10ns

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2370pF @ 20V

Width :

6.22mm

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 14A, 10V

Threshold Voltage :

-1.6V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

-13A

Nominal Vgs :

-1.6 V

Power Dissipation :

1.3W

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Number of Pins :

3

Weight :

260.37mg

Mount :

Surface Mount

Length :

6.73mm

JESD-609 Code :

e3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

35V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs (Max) :

±25V

Mounting Type :

Surface Mount

Turn On Delay Time :

18 ns

Height :

2.517mm

Drain Current-Max (Abs) (ID) :

55A

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Resistance :

11.6mOhm

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Ta 55A Tc

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-35V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Power Dissipation-Max :

3.1W Ta 57W Tc

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

25V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

36 ns

Turn-Off Delay Time :

62 ns

Operating Temperature :

-55°C~150°C TJ