FDD3510H
- Mfr.Part #
- FDD3510H
- Manufacturer
- onsemi
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet
- Download
- Description
- MOSFET N/P-CH 80V 4.3/2.8A TO252
- Stock
- 12,746
- In Stock :
- 12,746
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Continuous Drain Current (ID) :
- 2.8A
- Rise Time :
- 3ns
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A 2.8A
- JESD-30 Code :
- R-PSSO-G4
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Power Dissipation :
- 3.1W
- Fall Time (Typ) :
- 5 ns
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 25 ns
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Elements :
- 2
- Weight :
- 260.37mg
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 80mOhm
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 40V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 80V
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 4.3A, 10V
- Max Power Dissipation :
- 1.3W
- ECCN Code :
- EAR99
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 4.3A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N and P-Channel, Common Drain
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Package / Case :
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Avalanche Energy Rating (Eas) :
- 37 mJ
- Datasheets
- FDD3510H

FDD3510H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDD3510H Description
These dual N and P channel enhanced mode power MOSFET are manufactured using on Semiconductor's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance.
FDD3510H Features
Q1: N-Channel
Max rDS(on) = 80m? at VGS = 10V, ID = 4.3A
Max rDS(on) = 88m? at VGS = 6V, ID = 4.1A
Q2: P-Channel
Max rDS(on) = 190m? at VGS = -10V, ID = -2.8A
Max rDS(on) = 224m? at VGS = -4.5V, ID = -2.6A
100% UIL Tested
RoHS Compliant
FDD3510H Applications
Inverter
H-Bridge
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