FDD3510H

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

2.8A

Rise Time :

3ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

4.3A 2.8A

JESD-30 Code :

R-PSSO-G4

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Form :

Gull wing

Terminal Position :

Single

Number of Terminations :

4

Lead Free :

Lead Free

Power Dissipation :

3.1W

Fall Time (Typ) :

5 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Pbfree Code :

yes

Number of Elements :

2

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

Resistance :

80mOhm

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 40V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

80V

Rds On (Max) @ Id, Vgs :

80m Ω @ 4.3A, 10V

Max Power Dissipation :

1.3W

ECCN Code :

EAR99

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drain Current-Max (Abs) (ID) :

4.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

8 Weeks

FET Type :

N and P-Channel, Common Drain

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Avalanche Energy Rating (Eas) :

37 mJ