FDD306P
- Mfr.Part #
- FDD306P
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 6.7A TO252
- Stock
- 19,689
- In Stock :
- 19,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Ta
- Number of Elements :
- 1
- Height :
- 2.39mm
- Published :
- 2005
- Weight :
- 260.37mg
- Number of Terminations :
- 2
- Power Dissipation :
- 52W
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Length :
- 6.73mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- -500 mV
- Radiation Hardening :
- No
- Dual Supply Voltage :
- -12V
- Width :
- 6.22mm
- Drain to Source Breakdown Voltage :
- -12V
- Gate to Source Voltage (Vgs) :
- 8V
- Pbfree Code :
- yes
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Current Rating :
- -6.7A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -12V
- Power Dissipation-Max :
- 52W Ta
- Turn On Delay Time :
- 16 ns
- Continuous Drain Current (ID) :
- 6.7A
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 12V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 54A
- Series :
- PowerTrench®
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 34 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 6.7A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 6V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 8ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Resistance :
- 90mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 41 ns
- Threshold Voltage :
- -500mV
- Datasheets
- FDD306P

P-Channel Tape & Reel (TR) 28m Ω @ 6.7A, 4.5V ±8V 1290pF @ 6V 21nC @ 4.5V 12V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD306P Description
FDD306P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on the high-performance low-voltage PowerTrench technology for extremely low RDS (on). It is able to provide fast switching speed and high power and current handling capability. As a result, is is optimized for battery power management.
FDD306P Features
-
Fast switching speed
-
Low RDS (on)
-
High-performance trench technology
-
High power and current handling capability
-
Available in the TO-252 package
FDD306P Applications
-
DC/DC converter
-
Battery power management
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